PbS Colloidal Quantum Dots/ZnO/Si Hybrid Photodiode with Various Reverse Bias Voltages
PbS Colloidal Quantum Dots/ZnO/Si Hybrid Photodiode with Various Reverse Bias Voltages
カテゴリ: 論文誌(論文単位)
グループ名: 【E】センサ・マイクロマシン部門
発行日: 2022/01/01
タイトル(英語): PbS Colloidal Quantum Dots/ZnO/Si Hybrid Photodiode with Various Reverse Bias Voltages
著者名: Norihiro Miyazawa (Department of Electrical Engineering and Information Systems, The University of Tokyo), Haibin Wang (Research Center for Advanced Science and Technology, The University of Tokyo), Naoto Usami (Institute of Space and Astronautical Scienc
著者名(英語): Norihiro Miyazawa (Department of Electrical Engineering and Information Systems, The University of Tokyo), Haibin Wang (Research Center for Advanced Science and Technology, The University of Tokyo), Naoto Usami (Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA)), Takaya Kubo (Research Center for Advanced Science and Technology, The University of Tokyo), Hiroshi Segawa (Research Center for Advanced Science and Technology, The University of Tokyo), Yoshio Mita (Department of Electrical Engineering and Information Systems, The University of Tokyo/Systems Design Lab, School of Engineering, The University of Tokyo), Akio Higo (Systems Design Lab, School of Engineering, The University of Tokyo)
キーワード: infrared photodetector,PbS colloidal quantum dots,heterointerface
要約(英語): We have realized an infrared (IR) photodiode with silicon for the future beyond-VLSI photonics. Colloidal quantum dot (CQD) integration with Si is a simple process. We previously reported a PbS CQD/ZnO/Si hybrid IR photodiode. The device had an absorption peak at 1230 nm. To improve the quantum efficiency, we investigated the dose levels of Si substrates and improved the external quantum efficiency (EQE) by using a structural approach, such as using a higher doping level of Si. We achieved a 1230 nm absorption peak with an ITO/Au/PbS-EDT/PbS-I CQDs/ZnO/Si hybrid IR photodiode with an EQE close to 7%, at a reverse bias of -0.5 V.
本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.142 No.1 (2022) 特集:センサ・マイクロマシン英文特集号
本誌掲載ページ: 2023/08/12 p
原稿種別: 論文/英語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/142/1/142_8/_article/-char/ja/
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