反応性スパッタリング法により作製したSiON膜を用いたMEMSプロセスの検討

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2022/10/01

タイトル(英語): Investigation of MEMS Process using SiON Film Deposited by Reactive Sputtering

著者名: 伊藤　浩（東京工業高等専門学校），坂本　海人（東京工業高等専門学校），佐藤　翔介（東京工業高等専門学校），川又　由雄（東京工業高等専門学校），新國　広幸（東京工業高等専門学校）

著者名(英語): Hiroshi Ito (National Ins. of Tech., Tokyo College), Kaito Sakamoto (National Ins. of Tech., Tokyo College), Syosuke Sato (National Ins. of Tech., Tokyo College), Yoshio Kawamata (National Ins. of Tech., Tokyo College), Hiroyuki Nikkuni (National Ins. of Tech., Tokyo College)

キーワード: SiON，反応性スパッタリング，KOHエッチング，MEMSプロセス_x000D_　　SiON，reactive sputtering，KOH etching，MEMS process

要約(英語): In this study, we examined the film quality improvement and the etching characteristics of BHF and KOH solutions of SiON films prepared by reactive sputtering, and their application to MEMS processes. From these results, it was found that the sputtered SiON film can be patterned by a normal photo resist film because it dissolves relatively easily in BHF solution, and that it has good tolerance of KOH etching and is effective as a protective film in the diaphragm process. Finally, the MEMS process of the piezo-resistive pressure sensor was proposed, and the sample was actually prepared. As a result, the sputtered SiON film produced in this experiment can be sufficiently adapted in the MEMS process, and it is effective for the simplicity and cost reduction of the MEMS process. It is expected that it is possible to propose a new MEMS process by these advantages of the sputtered SiON film.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.142 No.10 （2022）

本誌掲載ページ: 273-277 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/142/10/142_273/_article/-char/ja/