窒化ガリウム高電子移動度トランジスタの内部構造評価

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2022/12/01

タイトル(英語): Evaluation of Internal Structure of GaN High Electron Mobility Transistor

著者名: 加藤　圭一郎（千葉工業大学），山本　秀和（千葉工業大学），佐藤　宣夫（千葉工業大学）

著者名(英語): Keiichiro Kato (Chiba Institute of Technology), Hidekazu Yamamoto (Chiba Institute of Technology), Nobuo Satoh (Chiba Institute of Technology)

キーワード: パワーデバイス，窒化ガリウム，高電子移動度トランジスタ，ノーマリィオフ，走査型電子顕微鏡，走査型プローブ顕微鏡_x000D_　　power device，GaN (Gallium Nitride)，HEMT (High Electron Mobility Transistor)，normally-off，SEM (Scanning Electron Microscope)，SPM (Scanning Probe Microscope)

要約(英語): Improving the performance of power devices is necessary to perform highly efficient power conversion. Therefore, better power devices made of wide bandgap semiconductors have come to be used. However, most of the complicated structures of GaN-HEMT as high-speed operating devices have not been analyzed in detail. In this study, we clarified the structures of GaN-HEMT by analyzing with the SEM, TEM, EDS, and the multifunctional SPM. We have clarified the existence of fine electrodes and p-type GaN layers near the source and drain electrodes by using SEM. We have clarified the composition of the superlattice strain relief layer of about 5 nm and the AlGaN layer for carrier generation of about 20 nm by using TEM and EDS. We have clarified the dopant polarity of a p-type GaN layer with a thickness of about 300 nm under the gate electrode for normally-off function by using the multifunctional SPM.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.142 No.12 （2022）

本誌掲載ページ: 316-324 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/142/12/142_316/_article/-char/ja/