メカニカルセンサ設計のための半導体ピエゾ抵抗予測モデル

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2023/06/01

タイトル(英語): Semiconductor Piezoresistance Prediction Model for Mechanical Sensor Design

著者名: 仲西　亮（立命館大学 理工学部），森川　諒（立命館大学 理工学部），河合　将史（立命館大学 理工学部），中原　拓海（立命館大学 理工学部），鳥山　寿之（立命館大学 理工学部）

著者名(英語): Ryo Nakanishi (College of Science and Engineering, Ritsumeikan University), Ryo Morikawa (College of Science and Engineering, Ritsumeikan University), Masashi Kawai (College of Science and Engineering, Ritsumeikan University), Takumi Nakahara (College of

キーワード: ピエゾ抵抗材料，ダイヤモンド，閃亜鉛鉱，電子バンドパラメータ，せん断ピエゾ抵抗係数　　piezoresistive materials，diamond，zinc-blende，electronic band parameters，shear piezoresistance coefficient

要約(英語): This paper addresses semiconductor piezoresistive materials selection in MEMS engineering design. From the practical engineering point of view, it is important to understand piezoresistance properties of semiconductors even if less accuracy under feasibility design phase. However, piezoresistance is frequently analyzed based on first principle electronic band structure simulations by sophisticate physicists. Practical engineers not familiar with this simulation cannot directly apply useful information derived from the result of simulation. This paper provides practical prediction method for piezoresistance based on electronic band parameters obtained from the state-of-the-art solid-state physics. It is demonstrated that the crucial parameters which control the p-type shear piezoresistance coefficient π44 in diamond and zinc-blend single crystals are the inverse of square of bond length in unit cell atom, the square root of valence light hole mass, and the shear elastic compliance coefficient S44.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.143 No.6 （2023）

本誌掲載ページ: 110-119 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/143/6/143_110/_article/-char/ja/