Experimental Study on Dynamic Behavior of Power MOSFET Based on Capacitance-Voltage Characteristics

カテゴリ: 研究会(論文単位)

論文No: SPC08152

グループ名: 【D】産業応用部門　半導体電力変換研究会

発行日: 2008/10/24

タイトル(英語): Experimental Study on Dynamic Behavior of Power MOSFET Based on Capacitance-Voltage Characteristics

著者名: NathabhatPhankong (KyotoUniversity),TsuyoshiFunaki (OsakaUniversity),TakashiHikihara (KyotoUniversity)

著者名(英語): Nathabhat Phankong(Kyoto University),Tsuyoshi Funaki(Osaka University),Takashi Hikihara(Kyoto University)

キーワード: Power MOSFET model|Transient response|Parameter extraction|C-V characteristics

要約(英語): Dynamic behaviors of power MOSFET, classically, are related to parasitic capacitances, which are measured as inter-terminal capacitances. The aim of this paper is to model the dynamic behaviors of power MOSFET based on the physical structure of the device

原稿種別: 日本語

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