フラクタル次元によるアモルファス炭化珪素の内部応力と電気的膜破壊現象

カテゴリ: 全国大会

論文No: 2-137

グループ名: 【全国大会】平成12年電気学会全国大会論文集

発行日: 2000/03/21

タイトル(英語): Internal Stress and Electrical Film Breakdown Phenomenon in a-SiC Films Elucidated due to Fractal Dimension

著者名: 大山昌憲 (国立東京工業高等専門学校),藤田安彦 (東京都立科学技術大学)

著者名(英語): マサノリ (Tokyo National College of Technology),ヤスヒコ (Tokyo Metropolitan Institute of Technology)

キーワード: フラクタル|SiC薄膜|膜破壊|内部応力

要約(日本語): Holding the a-SiC thin film in sandwich form with transparent electrode in high electric field, film breakdown occurred. The figure of the surface breakdown showed fractal phenomenon. The relation between fractal dimension D and the internal stress σ could be obtained from the related equation of log D = aσ+ b. Fractal dimension D was obtained between the value of 1.02-1.68 in the thickness range of 0.04-0.6μm of the a-SiC film. Through handling the fractal dimension of film breakdown in the a-SiC thin film, it was found out that the growth process of internal stress and the thin film structure could be analyzed.

原稿種別: 日本語

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