Thin Gate SiC Schottky Diodes: Characterization and Applications to Gas Sensors

カテゴリ: 全国大会

論文No: 3-135

グループ名: 【全国大会】平成12年電気学会全国大会論文集

発行日: 2000/03/21

タイトル(英語): Thin Gate SiC Schottky Diodes: Characterization and Applications to Gas Sensors

著者名: Shabbir Khan(埼玉大学),Elder A. de Vasconcelos (埼玉大学),張文芸 (埼玉大学),内田 秀和(埼玉大学),勝部 昭明(埼玉大学)

著者名(英語): Shabbir Khan(Saitama University),Elder A. de Vasconcelos (Saitama University),Wenyi Zhang(Saitama University),Hidekazu Uchida(Saitama University),Teruaki Katsube(Saitama University)

要約(日本語): It is known that thin catalytic gate devices present enhanced sensitivity to some gas species when compared with thick gate devices. In this work, thin catalytic gate thin SiC Schottky diodes were fabricated on non-epitaxial and epitaxial 6H-SiC wafers. The effect of the epitaxial layer on series resistance, barrier height and ideality factor of the diodes was investigated. Both epitaxial and non-epitaxial wafers yield functional diodes with reasonable values of barrier height and ideality factor. Devices fabricated on epitaxial SiC present lower series resistance and reverse current. The effect of gas atmosphere and temperature is also discussed.

原稿種別: 日本語

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