Laser-ablated Thin-Pt gate Schottky Diode with 4H- and 6H-SiC: Response to NO Gas in High Temparature

カテゴリ: 全国大会

論文No: 3-116

グループ名: 【全国大会】平成15年電気学会全国大会論文集

発行日: 2003/03/17

タイトル(英語): Laser-ablated Thin-Pt gate Schottky Diode with 4H- and 6H-SiC: Response to NO Gas in High Temparature

著者名: Khan Shabbir(埼玉大学),高巍 (埼玉大学),長谷川 有貴(埼玉大学),内田 秀和(埼玉大学),勝部 昭明(埼玉大学)

著者名(英語): Khan Shabbir(Saitama University),Wei Gao(Saitama University),Yuki Hasegawa(Saitama University),Hidekazu Uchida(Saitama University),Teruaki Katsube(Saitama University)

キーワード: Thin-Pt gate|Gas sensor|SiC|High temperature|Laser ablation|Pollution control

要約(日本語): It is very important to detect some harmful gases like NO, NO2, CO etc. for pollution control. Boilers, automobiles etc. are major source for these types of gases. Detection and controls of these gases in high temperature has great importance.In our research, we have intention to fabricate NO gas sensor that works in high temperature. We fabricated thin-Pt gate Schottky diodes with SiC substrates that have direct response to NO gas in high temperature. It is possible to measure current variations for NO at different concentrations. We will present in details on NO sensing of laser-ablated thin-Pt gate Schottky diodes.

原稿種別: 日本語

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