Influence of Substrate Temperature on Carbon Film Deposition in Surface Wave exited Plasma CVD Apparatus

カテゴリ: 全国大会

論文No: 1-207

グループ名: 【全国大会】平成20年電気学会全国大会論文集

発行日: 2008/03/19

タイトル(英語): Influence of Substrate Temperature on Carbon Film Deposition in Surface Wave exited Plasma CVD Apparatus

著者名: キム ドンミン(東京大学),大崎 博之(東京大学),桂井 誠(放送大学)

著者名(英語): Dongmin Kim(The University of Tokyo),Hiroyuki Ohsaki(The University of Tokyo),Makoto Katsurai(The Open University of Japan)

キーワード: 表面波プラズマ|DCバイアス|プラズマポテンシャル|プラズマCVD|カーボン系薄膜|基板温度

要約(日本語): A DC bias method to control the space potential of the bulk plasma in a Ring Dielectric Line typed Surface Wave exited Plasma (RDL-SWP) apparatus has been studied. Using this bias method, to evaluate the influence of substrate temperature on carbon film deposition, experiments for synthesizing carbon films were carried out under the condition of different substrate temperatures with applying -100V bias voltage. The deposited films were investigated by Ar+ laser Raman spectroscopy and field emission scanning electron microscope (FE-SEM).

原稿種別: 日本語

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