Plasma Behavior of Laser Assisted Sn Discharge EUV Source

カテゴリ: 全国大会

論文No: 1-185

グループ名: 【全国大会】平成21年電気学会全国大会論文集

発行日: 2009/03/15

タイトル(英語): Plasma Behavior of Laser Assisted Sn Discharge EUV Source

著者名: QIUSHI ZHU(東京工業大学),山田 淳三郎(東京工業大学),岸 望(東京工業大学),細貝 知直(東京工業大学),渡辺 正人(東京工業大学),沖野 晃俊(東京工業大学),堀田 栄喜(東京工業大学)

著者名(英語): QIUSHI ZHU(Tokyo Institute of Technology),JUNZABURO YAMADA(Tokyo Institute of Technology),NOZOMU KISHI(Tokyo Institute of Technology),TOMONAO HOSOKAI(Tokyo Institute of Technology),MASATO WATANABE(Tokyo Institute of Technology),AKITOSHI OKINO(Tokyo Institute of Technology),EIKI HOTTA(Tokyo Institute of Technology)

キーワード: EUV、　リソグラフィ、放電、すず

要約(日本語): Extreme-ultraviolet (EUV) lithography is most promising technology for 32 nm technology node. In our laboratory, a laser assisted tin target discharge produced plasma EUV source has been studied. Since the EUV emission characteristics are strongly dependent on the behavior of plasma, we studied the plasma’s Z-pinch dynamics during discharge by visible region high speed camera. The Zipper-effect of the pinch plasma has been observed, which affects the position of EUV emission. The pinch spot is moving from anode to the tin cathode And from the experimental results of the EUV intensity and spot size obtained by the EUV pinhole camera, we found the optimum electrodes distance and laser energy for EUV generation is 4mm and 51mJ respectively at current discharge condition.

原稿種別: 日本語

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