Preparation of AlN thin film by pulse laser deposition for FBAR application

カテゴリ: 全国大会

論文No: 1-199

グループ名: 【全国大会】平成22年電気学会全国大会論文集

発行日: 2010/03/05

タイトル(英語): Preparation of AlN thin film by pulse laser deposition for FBAR application

著者名: 王 植平(富山大学),萱原功一 (富山大学),伊藤 弘昭(富山大学),升方 勝己(富山大学)

著者名(英語): Z.P. Wang(University of Toyama),Koichi Kayahara(University of Toyama),Hiroaki Ito(University of Toyama),Katumi Masugata(University of Toyama)

要約(日本語): The rapid growth of wireless mobile telecommunication systems has led to an increasing demand for Film Bulk Acoustic Resonator (FBAR) device operating in the range between 500 MHz and 10 GHz require thin piezoelectric layers in the order of a few μm down to 100 nm. Aluminum nitride AlN is one of piezoelectric ceramic materials and has high thermal and chemical stabilities. In this conference, we report our recent results on pulse laser deposited AlN film for FBAR application.

原稿種別: 日本語

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