Turn-off Surge Voltage Analysis of 1200V SiC Schottky Barrier Diode

カテゴリ: 全国大会

論文No: 4-138

グループ名: 【全国大会】平成23年電気学会全国大会論文集

発行日: 2011/03/05

タイトル(英語): Turn-off Surge Voltage Analysis of 1200V SiC Schottky Barrier Diode

著者名: Rejeki Simanjorang(National Institute of Advanced Industrial Science and Technology),Hiroshi Nakagawa(National Institute of Advanced Industrial Science and Technology),Hiroshi Yamaguchi(National Institute of Advanced Industrial Science and Technology),Hiroshi Sato(National Institute of Advanced Industrial Science and Technology)

著者名(英語): Rejeki Simanjorang(National Institute of Advanced Industrial Science and Technology),Hiroshi Nakagawa(National Institute of Advanced Industrial Science and Technology),Hiroshi Yamaguchi(National Institute of Advanced Industrial Science and Technology),Hiroshi Sato(National Institute of Advanced Industrial Science and Technology)

キーワード: SiC|ダイオード|サージ電圧

要約(日本語): The RLC circiut models have been provided to study turn-off surge voltage phenomena of SiC Schottky barrier diode. The proposed model has been verified by the simulation and experimental results. The influence of dynamic junction capacitance of SiC Schottky barrier diode has a strong influence to determine the peak value of the transient surge voltage.

原稿種別: 日本語

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