GaN基板のマイクロプラズマによる表面改質

カテゴリ: 全国大会

論文No: 1-213

グループ名: 【全国大会】平成24年電気学会全国大会論文集

発行日: 2012/03/05

タイトル(英語): Surface Treatment of GaN Substrate by Microplasma

著者名: 清水 一男(静岡大学),野間 悠太(静岡大学),Marius Blajan(静岡大学),成塚重弥 (名城大学)

著者名(英語): Kazuo Shimizu(Shizuoka University),Yuta Noma(Shizuoka University),Marius Blajan(Shizuoka University),Shigeya Naritsuka(Meijo University)

キーワード: 大気圧マイクロプラズマ|表面改質|GaN|転位

要約(日本語): GaN is widely studied and developed as a material for new application in power electronics devices or as emitter of various color of light. GaN is usually formed by nitriding GaAs and grown on the sapphire substrate with a high dislocation density. For this dislocation, microchannel epitaxy (MCE) or regrowth of GaN is required to reduce dislocations. Recently, plasma treatment was used for interface treatment, regrowing of GaN crystal and nitridation process of GaAs. GaN surface was treated by atmospheric pressure microplasma using Ar and N2 as process gases and powered by AC and pulse power supplies. Modifications of the surface were observed after the treatment and they depend on the gas process, treatment time and power supply.

原稿種別: 日本語

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