Analysis of Turn-off Surge Voltage Peak by Considering Dynamic Junction Capacitance of SiC-Schottky Barrier Diode

カテゴリ: 全国大会

論文No: 4-147

グループ名: 【全国大会】平成24年電気学会全国大会論文集

発行日: 2012/03/05

タイトル(英語): Analysis of Turn-off Surge Voltage Peak by Considering Dynamic Junction Capacitance of SiC-Schottky Barrier Diode

著者名: シマンジョランレジェキ (産業技術総合研究所),山口 浩(産業技術総合研究所),佐藤 弘(産業技術総合研究所),仲川 博(産業技術総合研究所)

著者名(英語): Rejeki Simanjorang(Advanced Industrial Science and Technology),Hiroshi Yamaguchi(Advanced Industrial Science and Technology),Hiroshi Sato(Advanced Industrial Science and Technology),Hiroshi Nakagawa(Advanced Industrial Science and Technology)

キーワード: SiC Schottky Barrier Diode|Dynamic junction capacitance|Peak of surge voltage|Voltage Source Inverter|Unipolar devices

要約(日本語): This paper proposes an analytical method of the surge voltage peak by considering dynamic junction capacitance of SiC-schottky barrier diode(SBD) . This method is useful for estimating maximum peak of surge voltage of SiC-SBD, and by using this method, the influence of the switching speed (dv/dt) and inductance in circuit on the surge voltage peak is clarified. The analytical results show that maximum of surge voltage peak is independent from the inductance in circuit for ultra high dv/dt condition, and the dominant parameter to decrease surge voltage peak is dv/dt of supplied voltage to circuit.

原稿種別: 日本語

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