Electrothermal Evaluation of SiC MOSFETs during Unclamped Inductive Switching

カテゴリ: 全国大会

論文No: 4-014

グループ名: 【全国大会】平成28年電気学会全国大会論文集

発行日: 2016/03/05

タイトル(英語): Electrothermal Evaluation of SiC MOSFETs during Unclamped Inductive Switching

著者名: 安 俊傑(筑波大学),生井 正輝(筑波大学),岡本 大(筑波大学),矢野 裕司(筑波大学),只野 博(筑波大学),岩室 憲幸(筑波大学)

著者名(英語): Junjie An(University of Tsukuba),Masaki Namai(University of Tsukuba),Dai Okamoto(University of Tsukuba),Hiroshi Yano(University of Tsukuba),Hiroshi Tadano(University of Tsukuba),Noriyuki Iwamuro(University of Tsukuba)

キーワード: パワー半導体デバイス,SiC,MOSFET,破壊耐量

要約(日本語): Unclamped inductive switching test is crucial to evaluate the thermal reliability and stability of power device in avalanche mode. In this study, unclamped inductive switching capability of 1200V SiC-MOSFETs has been studied in the condition of 400V DC bus and 1mH inductance. Two simple methods include fixed peak current and alterable peak current are used to explore the maximum junction temperature during avalanche mode in different ambient temperature range from 300K to 450K. The fit curves of experimental results indicate that SiC-MOSFETs can endure almost three times higher lattice temperature compared with silicon power device, which shows the best candidate ability to the power switching application.

原稿種別: 英語

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