Development of a bonding technique using photoresists for a pressure sensor array.

カテゴリ: 全国大会

論文No: 3-165

グループ名: 【全国大会】平成31年電気学会全国大会論文集

発行日: 2019/03/01

タイトル(英語): Development of a bonding technique using photoresists for a pressure sensor array.

著者名: You-Na Lee(Toyohashi University of Technology),Kanata Tanaka(Toyohashi University of Technology),Kensuke Murakami(Toyohashi University of Technology),Yasuyuki Kimura(Toyohashi University of Technology),Tatsuya Iwata(Toyohashi University of Technology),Toshihiko Noda(Toyohashi University of Technology),Kazuaki Sawada(Toyohashi University of Technology),Ken Ogasahara(TOHO KASEI),Satoshi Shimizu(TOHO KASEI)

著者名(英語): You-Na Lee(Toyohashi University of Technology),Kanata Tanaka(Toyohashi University of Technology),Kensuke Murakami(Toyohashi University of Technology),Yasuyuki Kimura(Toyohashi University of Technology),Tatsuya Iwata(Toyohashi University of Technology),Toshihiko Noda(Toyohashi University of Technology),Kazuaki Sawada(Toyohashi University of Technology),Ken Ogasahara(TOHO KASEI Co., LTD.),Satoshi Shimizu(TOHO KASEI Co., LTD.)

キーワード: 圧力センサ,センサアレイ,ボンディング技術,触感センサ,高解像度,イメージセンサ

要約(日本語): Even though there are recently a growing interesting of touch sensing devices with a high spatial resolution in robotic field, most of all sensors are limited due to their large device size. Especially high density array sensors based on MOSFETs have a problem with their thinner gate insulator layer, a junction of the thin gate insulator was easy to ruin during poling of piezoelectric materials directly deposited on an ion sensitive FET (ISFET) array. Therefore, we here demonstrate a bonding technique that connects a polarized PVDF film to a 256 × 256 ISFET array to fabricate the pressure sensor without the junction damages.

原稿種別: 英語

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