Investigation of Unclamped Inductive Switching Capability of Silicon Carbide MOSFETs

カテゴリ: 全国大会

論文No: 4-007

グループ名: 【全国大会】平成31年電気学会全国大会論文集

発行日: 2019/03/01

タイトル(英語): Investigation of Unclamped Inductive Switching Capability of Silicon Carbide MOSFETs

著者名: Kailun Yao(University of Tsukuba),Hiroshi Yano(University of Tsukuba),Noriyuki Iwamuro(University of Tsukuba)

著者名(英語): KAILUN YAO(University of Tsukuba),Hiroshi Yano(University of Tsukuba),Noriyuki Iwamuro(University of Tsukuba)

キーワード: SiC MOSFET,破壊耐量,p-ch MOSFET

要約(日本語): UIS capability of n-ch and p-ch SiC MOSFETs is investigated. The single pulse UIS failure of n-ch MOSFET is cause by melting of the surface metal heating during the avalanche time. The thermal introduced failure is not the reason that causes the UIS failure of p-ch MOSFET. The UIS failure mechanism of p-ch MOSFET is unclear and needs to deeply study.The repetitive UIS of p-ch MOSFET is studied experimentally and numerically. Measurement shows no obvious electrical degradations. Simulation shows that the electrical stress of channel region during UIS is low, which can give a reasonable explanation of no obvious degradation.

原稿種別: 英語

PDFファイルサイズ: 688 Kバイト