Study on the Imbalanced Voltage of Series-Connected Active Power Semiconductor Devices in Power Conversion Systems

カテゴリ: 全国大会

論文No: 4-024

グループ名: 【全国大会】平成31年電気学会全国大会論文集

発行日: 2019/03/01

タイトル(英語): Study on the Imbalanced Voltage of Series-Connected Active Power Semiconductor Devices in Power Conversion Systems

著者名: Hongjing Zhang(Nagoya University),Jun Imaoka(Nagoya University),Mostafa Noah(Nagoya University),Yuki Ishikura(Nagoya University),Masayoshi Yamamoto(Nagoya University)

著者名(英語): Hongjing Zhang(Nagoya University),Jun Imaoka(Nagoya University),Mostafa Noah(Nagoya University),Yuki Ishikura(Nagoya University),Masayoshi Yamamoto(Nagoya University)

キーワード: Series-Conected MOSFETs,Boost Converter,Voltage imbalance,Power Devices

要約(日本語): MOSFETs have been widely utilized in many applications for several electronic devices as switching power devices. However, the limited drain-source breakdown voltage makes it difficult to use a single MOSFET switch in high voltage power conversion systems. One of the attractive solutions to solve this issue is to connect two or more MOSFETs in series, therefore, the applied voltage can be shared among the power devices to achieve higher efficiency and lower cost. Nonetheless, this circuit topology suffers from imbalanced drain-source voltage (VDS) sharing among the series connected MOSFETs. The purpose of this paper is to investigate the reasons of the VDS imbalance in series connected MOSFETs.

原稿種別: 英語

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