所望の周波数帯のEMIとスイッチング損失の両方を低減するIGBTのゲート駆動方法

カテゴリ: 全国大会

論文No: 4-013

グループ名: 【全国大会】令和2年電気学会全国大会論文集

発行日: 2020/03/01

タイトル(英語): New Gate Driving Technique to Reduce Both EMI in User-Defined Frequency Band and Switching Loss in IGBTs

著者名: 森川隆造（東京大学）,崔通（東京大学）,畑勝裕（東京大学）,高宮真（東京大学）

著者名(英語): Ryuzo Morikawa (The University of Tokyo),Toru Sai (The University of Tokyo),Katsuhiro Hata (The University of Tokyo),Makoto Takamiya (The University of Tokyo)

キーワード: ゲートドライバー|IGBT|EMI|スイッチング損失|アイジービーティ―|イーエムアイ|スイッチングソンシツ

要約(日本語): A new gate driving technique using a digital gate driver IC is proposed to reduce both EMI in user-defined specific frequency band and the switching loss in IGBTs to achieve a highly efficient power converter complying with EMI regulations. The reduction is automatically achieved by repeating the switching measurements and exploring optimum gate driving vectors of the digital gate driver using a simulated annealing algorithm. In the double pulse test of IGBT at 20 A and 300 V, compared with the conventional single step gate driving, the proposed digital gate driving reduces EMI by 38 dB at maximum in the 2 MHz to 4 MHz band at the same switching loss.

本誌掲載ページ: 24-25 p

原稿種別: 日本語