カルーセルスパッタ法で作製したCoFe系GHz帯磁性薄膜の異方性入射効果と原子配列
カルーセルスパッタ法で作製したCoFe系GHz帯磁性薄膜の異方性入射効果と原子配列
カテゴリ: 論文誌(論文単位)
グループ名: 【A】基礎・材料・共通部門
発行日: 2011/07/01
タイトル(英語): Effect of Anisotropic Incidence and Atomic Arrangement of CoFe System Magnetic Thin Films for the GHz Frequency in the Carousel Sputtering Method
著者名: 今泉 良一(崇城大学エネルギーエレクトロニクス研究所),宗像 誠(崇城大学エネルギーエレクトロニクス研究所),大越 正敏(九州工業大学情報工学部),槙 孝一郎(住友金属鉱山(株))
著者名(英語): Ryoichi Imaizumi (Energy Electronics Laboratory, Sojo University), Makoto Munakata (Energy Electronics Laboratory, Sojo University), Masatoshi Ohkoshi (Faculty of Computer Science, Kyusyu Institute of Technology), Kouichirou Maki (Sumitomo Metal Mining Co., Ltd.)
キーワード: カルーセルスパッタ法,CoFeB膜,CoFe膜,一軸異方性磁界,異方性入射効果 carrousel sputtering method,CoFeB film,CoFe film,uniaxial-anisotropy field,effect of anisotropic incidence
要約(英語): To increase the uniaxial-magnetic anisotropy in thin-film materials is the key issue for the micro-magnetic devices driven in a GHz frequency. It is known that an especially large uniaxial- magnetic anisotropy was induced only by the carousel sputtering method. In this paper, an atomic deposition process of the CoFeB and CoFe films were analyzed by using simulation of Kinetic Theory of Gases. The result exhibited that the sputtered particles had remarkably anisotropic incidence to the substrate leading to different atomic distances with respect to the incident direction, which results in a magnetic elastic effect. These sputtered particles with the anisotropic incidence give rise to a main cause of the higher uniaxial- magnetic anisotropy of the films.
本誌: 電気学会論文誌A(基礎・材料・共通部門誌) Vol.131 No.7 (2011) 特集:高周波マイクロ磁気応用技術の最前線
本誌掲載ページ: 499-504 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/131/7/131_7_499/_article/-char/ja/
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