金属-絶縁体ナノグラニュラー膜のTMRと省電力磁気センサGIGS(R)

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2012/10/01

タイトル(英語): TMR of Metal-insulator Nano-granular Thin Films and Power-saving Magnetic Sensor GIGS(R)

著者名: 小林　伸聖(公益財団法人電磁材料研究所)，増本　健(公益財団法人電磁材料研究所)

著者名(英語): Nobukiyo Kobayashi (Research Institute for Electric and Magnetic Materials), Tsuyoshi Masumoto (Research Institute for Electric and Magnetic Materials)

キーワード: ナノグラニュラー，トンネル磁気抵抗効果，磁気センサ，低消費電力，小型，薄膜　　nano-granular，tunneling magnetoresistance，magnetic sensor，power-saving，small size，thin film

要約(英語): The structure and tunnel magneto-resistance of (Fe-Ni or Fe-Co)-(Mg-F) nano-granular thin films were investigated. The films were prepared by a tandem deposition method, using Fe-Ni or Fe-Co alloy and MgF2 insulator targets. A granular structure was found to be consisted of Fe-Ni or Fe-Co based nano-granules surrounded by thin intergranules of Mg based fluoride which were crystallized with a MgF2 structure. These films show tunnel-type magnetoresistance which is caused by the film structure. The GIGS(R) (Granular-in-Gap-Sensor) consisting of the (Fe-Co)-(Mg-F) nano-granular thin film filled into a narrow gap of soft magnetic a-CoFeSiB thin film was prepared. GIGS(R) has large electrical resistance (10kΩ-10MΩ) because of high electrical resistivity of metal-nonmetal nano-granular film. The large electric resistivity causes the reduction of the electricity consumption.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.132 No.10 （2012） 特集（Ⅰ）：新機能性ナノスケール磁性材料の作製・評価 特集（Ⅱ）：イノベーションを支える最新の計測技術2012

本誌掲載ページ: 827-832 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/132/10/132_827/_article/-char/ja/