Metal/Semiconductor構造における金属電極直下に広がる空乏層の光音響信号

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2013/03/01

タイトル(英語): Photoacoustic Signals of Depletion Layer Spread beneath Metal Electrode in Metal/Semiconductor Structure

著者名: 村上　雅彦（神奈川工科大学工学部電気電子情報工学科），高畠　信也（神奈川工科大学創造工学部ホームエレクトロニクス開発学科），佐藤　和紀（東海大学情報理工学部コンピュータ応用工学科），荒井　俊彦（神奈川工科大学工学部電気電子情報工学科）

著者名(英語): Masahiko Murakami (Department of Electrical and Electronic Engineering, Faculty of Engineering, Kanagawa Institute of Technology), Nobuya Takabatake (Department of Home Electronics, Faculty of Creative Engineering, Kanagawa Institute of Technology), Kazunori Sato (Department of Applied Computer Engineering, School of Information Science and Technology, Tokai University), Toshihiko Arai (Department of Electrical and Electronic Engineering, Faculty of Engineering, Kanagawa Institute of Technology)

キーワード: 光音響法，温度波，空乏層，MS構造，ショットキー障壁　　photoacoustic (PA) method，thermal-wave，depletion layer，metal/semiconductor (M/S) structure，Schottky barrier

要約(英語): The photoacoustic signal from the depletion layer beneath the metal electrode in a metal/semiconductor (M/S) structure was detected using the photoacoustic method. To measure the reverse-bias voltage dependence of distribution of the photoacoustic signal from the depletion layer, the surface of the electrode was illuminated and scanned by an intensity-modulated optical-beam. It was obtained that the photoacoustic signal phase differences between depletion layer generating and non-depletion layer were dependent on the depletion layer spreading. One dimensional scanning on the electrode has also revealed that spreading of a depletion layer extends from the each edges of an electrode.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.133 No.3 （2013） 特集：2011 International Symposium on Electrical Insulating Materials

本誌掲載ページ: 127-131 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/133/3/133_127/_article/-char/ja/