RFスパッタリング法による窒化鉄薄膜作製に及ぼすN2ガス分圧比とDCバイアスの影響

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2014/01/01

タイトル(英語): Effect of N2 Gas Pressure Ratio and DC Bias on Formation of Iron Nitride Thin Film by RF Sputtering Method

著者名: 関　貴弘（日本大学大学院生産工学研究科電気電子工学専攻），新妻　清純（日本大学生産工学部電気電子工学科）

著者名(英語): Takahiro Seki (Electrical and Electronic Engineering, Graduate School of Industrial Technology, Nihon University), Kiyozumi Niizuma (College of Industrial Technology, Nihon University)

キーワード: RFスパッタリング，窒化鉄，N2ガス分圧比，DCバイアス　　RF sputtering，Iron nitride，N2 gas pressure ratio，DC bias

要約(英語): In this paper, we investigated the effect of N2 gas pressure ratio and DC bias on the formation of iron nitride thin films deposited by RF sputtering method. As a result, the amounts of γ'-Fe4N and ε-Fe3N, which had high N2 content than that of α”-Fe16N2, increased with increasing N2 gas pressure ratio. From the result of x-ray diffraction, the Fe-N film at the N2 gas pressure ratio of 15% became the single phase of γ'-Fe4N. Therefore, we attempted the formation of α'-martensite and α”-Fe16N2 by applying DC bias voltage. It revealed that it was possible to control the N2 content and the coercive force by applying DC bias voltage. However, the formation of α”-Fe16N2 was not observed.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.134 No.1 （2014） 特集：2014年 研究開発の動向と最前線

本誌掲載ページ: 47-52 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/134/1/134_47/_article/-char/ja/