希土類添加半導体の発光における電子と正孔の役割

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2012/08/01

タイトル(英語): The Roles of Electrons and Holes in Luminescence of Rare-earth Doped Semiconductors

著者名: 石井　真史（(独) 物質・材料研究機構／The Photon Science Institute, University of Manchester），Brian Towlson（The Photon Science Institute, University of Manchester），原子　進（東京理科大学），趙　新為（東京理科大学），小室　修二（東洋大学），Bruce Hamilton（The Photon Science Institute, University of Manchester）

著者名(英語): Masashi Ishii (National Institute for Materials Science/The Photon Science Institute, University of Manchester), Brian Towlson (The Photon Science Institute, University of Manchester), Susumu Harako (Tokyo University of Science), Xin-Wei Zhao (Tokyo University of Science), Shuji Komuro (Toyo University), Bruce Hamilton (The Photon Science Institute, University of Manchester)

キーワード: 希土類添加半導体，発光機構，誘電緩和，界面，捕獲，再結合　　Rare-earth doped semiconductor，Luminescence mechanism，Dielectric relaxation，Interface，Trapping，Recombination

要約(英語): The roles of electrons and holes in photo-excited samarium doped titanium dioxide (TiO2:Sm) thin film were investigated with electric measurement techniques. For this purpose, a structural modification using interface states in silicon oxide between TiO2:Sm and a conductive silicon substrate was used. Since the interface states make a barrier to electrons in positive DC bias VDC, selective injection of holes into TiO2:Sm can be realized in VDC>0. Photo-excited dielectric relaxation (PEDR) technique, namely frequency dispersion measurement of complex impedance under excitation light, and the selective injection revealed that the Sm excitation was induced by an electron trapping with a slow response of～12 Hz and following recombination with holes in host TiO2 with ～950 Hz.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.132 No.8 （2012） 特集：光・量子ビームによるナノダイナミクス

本誌掲載ページ: 1255-1260 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/132/8/132_1255/_article/-char/ja/