GaN半導体型フォトカソードの量子効率の劣化現象と波長依存性

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2012/08/01

タイトル(英語): Quantum Yield Degradation from Extraction of Photocurrent and Residual Gas in a p-GaN Photocathode with an NEA Surface

著者名: 早瀬　和哉（東京理科大学理学部第二部物理学科），西谷　智博（(独) 理化学研究所），目黒　多加志（東京理科大学理学部第二部物理学科）

著者名(英語): Kazuya Hayase (Tokyo University of Science), Tomohiro Nishitani (RIKEN), Takashi Meguro (Tokyo University of Science)

キーワード: GaN，フォトカソード　　GaN，photocathode

要約(英語): A p-GaN semiconductor is the more suitable photocathode material than a p-GaAs semiconductor, because a p-type semiconductor with wide band gap has large vacuum level shift caused by surface band bending. We measured quantum yield degradation and quantum yield spectrum of a p-GaN photocathode with an NEA surface. The p-GaN photocathode had the process of quantum yield degradation from the extraction of photocurrent and the residual gas, it is found to be important to suppress backs-pattering due to the increase of background pressure. From the dependence of quantum yield of the p-GaN photocathode on excitation wavelength, the quantum yield spectrum rapidly increased around the band gap of GaN as expected.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.132 No.8 （2012） 特集：光・量子ビームによるナノダイナミクス

本誌掲載ページ: 1261-1264 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/132/8/132_1261/_article/-char/ja/