ホスホン酸系自己組織化単分子膜処理を施した酸化インジウム錫電極を用いたポリ（3-ヘキシルチオフェン）系有機受光素子の受光感度と光照射安定性改善

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2015/02/01

タイトル(英語): Improved Sensitivity and Durability of Poly(3-hexylthiophene) based Polymeric Photodetectors using Indium-tin-oxide Modified by Phosphonic Acid-based Self-assembled Monolayer Treatment

著者名: 梶井　博武（大阪大学 大学院工学研究科），佐藤　友亮（大阪大学 大学院工学研究科），森宗　太一郎（香川高等専門学校），大森　裕（大阪大学 大学院工学研究科）

著者名(英語): Hirotake Kajii (Graduate School of Engineering, Osaka University), Yusuke Sato (Graduate School of Engineering, Osaka University), Taichiro Morimune (National Institute of Technology, Kagawa College), Yutaka Ohmori (Graduate School of Engineering, Osaka University)

キーワード: 有機受光素子，自己組織化単分子膜，共役高分子，フラーレン，高感度　　organic photodetectors，self-assembled monolayer，conjugated polymers，fullerene，high sensitivity

要約(英語): Organic photodetectors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blends with indium-tin-oxide (ITO) modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. The mixed self-assembled monolayers (SAMs) serve to tune the surface free energy and the work function of ITO by varying the blend ratio. The phosphonic acid-based SAM treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer by analysis of impedance spectroscopy in P3HT hole-only device with SAMs. P3HT:PCBM device with ITO modified by short treatment time of 1H,1H,2H,2H-perfluorooctanephosphonic acid exhibits the incident-photon-to-current conversion efficiency of above 50 % at -2 V, high on/off ratio and improved durability.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.135 No.2 （2015） 特集：フレキシブルフィルムデバイスのための材料・プロセスと評価技術

本誌掲載ページ: 168-173 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/135/2/135_168/_article/-char/ja/