Si基板上AlGaN/GaNヘテロ構造FETの信頼性

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2016/04/01

タイトル(英語): Reliability of AlGaN/GaN Heterostructure FETs on Si Substrates

著者名: 安藤　裕二（ルネサス システムデザイン（株）），高橋　英匡（ルネサス システムデザイン（株））

著者名(英語): Yuji Ando (Runesas System Design Co., Ltd.), Hidedmasa Takahashi (Runesas System Design Co., Ltd.)

キーワード: GaN，ヘテロ構造FET，信頼性　　GaN，HFET，Reliability

要約(英語): This paper describes reliability of AlGaN/GaN heterostructure field-effect transistors fabricated on Si substrates. At an early stage of 50 V high temperature operating life tests, they exhibited a significant lowering of the forward turn-on voltage. The mean time to failure (MTTF) determined by this degradation mode was exponentially increased by decreasing full width at half maximum values of x-ray rocking curves. High-resolution transmission electron microscope and energy dispersive x-ray spectroscopy analyses revealed thinning or partial vanishment of GaN cap layer in a degraded sample. To account for these experimental findings, degradation mechanism assuming diffusion of interfacial materials along dislocations was discussed. An improved device operating at 50 V, where this degradation mode was suppressed, exhibited an MTTF exceeding 1×106 h at a channel temperature of 150℃.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.136 No.4 （2016） 特集：最新の化合物半導体デバイスとその応用技術

本誌掲載ページ: 449-454 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/136/4/136_449/_article/-char/ja/