ウェハボンディングプロセスを用いたInP系ダブルヘテロ接合バイポーラトランジスタの熱抵抗低減技術に関する検討

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2016/04/01

タイトル(英語): Investigation of Thermal Resistance Reduction of InP-based Double Heterojunction Bipolar Transistors Fabricated by Wafer Bonding

著者名: 白鳥　悠太（日本電信電話（株） NTT先端集積デバイス研究所），星　拓也（日本電信電話（株） NTT先端集積デバイス研究所），柏尾　典秀（日本電信電話（株） NTTデバイスイノベーションセンタ），栗島　賢二（日本電信電話（株） NTT先端集積デバイス研究所），日暮　栄治（東京大学 大学院工学系研究科），松崎　秀昭（日本電信電話（株） NTT先端集積デバイス研究所）

著者名(英語): Yuta Shiratori (NTT Device Technology Laboratories, NTT Corporation), Takuya Hoshi (NTT Device Technology Laboratories, NTT Corporation), Norihide Kashio (Device Innovation Center, NTT Corporation), Kenji Kurishima (NTT Device Technology Laboratories, NTT Corporation), Eiji Higurashi (School of Engineering, The University of Tokyo), Hideaki Matsuzaki (NTT Device Technology Laboratories, NTT Corporation)

キーワード: インジウムリン，ヘテロ接合バイポーラトランジスタ，ウェハボンディング，熱抵抗　　Indium phosphide，heterojunction bipolar transistor，wafer bonding，thermal resistance

要約(英語): Reduction of thermal resistance of InP-based double heterojunction bipolar transistors (DHBTs) is an important issue for preventing degradation of their reliability at high-collector-current-density operation. In order to reduce the thermal resistance, we fabricated InP-based DHBTs on a highly-thermal-conductive SiC substrate with two kinds of wafer bonding technologies (bonding first and bonding last technologies). In the bonding last technology, a thinned InP substrate with DHBTs fabricated in advance was bonded to a SiC substrate. On the other hand, in the bonding first technology, the devices were fabricated after the DHBT epitaxial-layer structure was transferred onto a SiC substrate by wafer bonding. It was found that electrical characteristics of 0.25-μm-emitter DHBTs fabricated by the bonding last technology degraded when the InP substrate was thinned down to 20 μm. In contrast, DHBTs fabricated by the bonding first technology successfully demonstrated marked reduction of their thermal resistance by 28% without any degradation of their electrical characteristics.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.136 No.4 （2016） 特集：最新の化合物半導体デバイスとその応用技術

本誌掲載ページ: 455-460 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/136/4/136_455/_article/-char/ja/