P-Type Cap層の導入によるGaAs JPHEMT RF特性の改善

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2016/04/01

タイトル(英語): Improvement of RF Characteristics with a P-Type Capping Layer in GaAs JPHEMT

著者名: 竹内　克彦（ソニー（株）厚木テクノロジーセンター）

著者名(英語): Katsuhiko Takeuchi (Sony Corporation Atsugi Technology Center)

キーワード: JPHEMT，RFスイッチ，Ron*Coff積，高調波歪特性，パワーハンドリング能力　　JPHEMT，RF switch，Ron*Coff product，harmonic distortion，power handling capability

要約(英語): Due to its low insertion loss and the high linearity, the GaAs Junction Pseudomorphic High Electron Mobility Transistor (JPHEMT) is widely used for RF switches in wireless communications. In this paper, we describe a JPHEMT with a p-type capping layer (p-cap JPHEMT) for improving the RF characteristics. The advantage of p-cap JPHEMT is shown by device simulation technology and the device parameters of the p-layer are optimized to enhance the off-state characteristics. It has been demonstrated that BVgs is 11 V higher, Coff is 25% lower, the power handling capability is better and the 3rd harmonic distortion is 6 dB lower than those of the conventional JPHEMT. The obtained Ron*Coff product of 100 fsec is very favorable compared with RF switches based upon conventional JPHEMT and SOI technologies.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.136 No.4 （2016） 特集：最新の化合物半導体デバイスとその応用技術

本誌掲載ページ: 461-466 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/136/4/136_461/_article/-char/ja/