Design of a Dual-directional Diode-triggered SCR for Low Voltage ESD Protection

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2020/06/01

タイトル(英語): Design of a Dual-directional Diode-triggered SCR for Low Voltage ESD Protection

著者名: Qiang Xu (Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University), Hailian Liang (Engineering Research Center of IoT Technology Applications (Ministry of Education), De

著者名(英語): Qiang Xu (Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University), Hailian Liang (Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University), Xiaofeng Gu (Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University)

キーワード: electrostatic discharge (ESD)，diode-triggered silicon controlled rectifier，dual-directional ESD protection

要約(英語): A novel dual-directional diode-triggered silicon controlled rectifier (DDTSCR) for low voltage electrostatic discharge (ESD) protection was designed and realized in a 0.18-μm CMOS process. Compared to the single-directional diode-triggered SCR (SDTSCR), the DDTSCR has dual-directional ESD protection performance due to the symmetric structure, and its ESD protection efficiency per unit area is about 2 times larger than that of SDTSCR under opposite ESD stresses, while remaining the similar trigger voltage of 1.68 V and the figure of merit. The human body model robustness of the DDTSCR measured by the transmission line pulse system is up to 8000 V with an area of 1400 μm2, suitable for low voltage ESD protection requirements.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.140 No.6 （2020） 特集：来るべきIoT社会に向けた情報通信技術

本誌掲載ページ: 673-674 p

原稿種別: 研究開発レター／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/140/6/140_673/_article/-char/ja/