GaN HEMTでのヘテロ接合界面での分極密度とゲートドレインリーク電流の理論計算

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2022/03/01

タイトル(英語): Simulation Study of Gate-Drain Leakage Current and Density of Polarization Charge at Heterojunction Interface in GaN HEMTs

著者名: 宮本　恭幸（東京工業大学工学院電気電子工学系），後藤　高寛（東京工業大学工学院電気電子工学系）

著者名(英語): Yasuyuki Miyamoto (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology), Takahiro Gotow (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)

キーワード: GaN HEMT，ヘテロ接合界面分極，ゲートドレイン間リーク電流，半極性ヘテロ界面　　GaN HEMT，polarization charge，gate-drain leakage current，semi-polar hetero-interface

要約(英語): In previous report, we showed that the source-drain leakage current at off state can be suppressed by thinning the undoped channel layer even if the gate length was reduced to 25 nm in device simulation of AlGaN/GaN HEMT. On the other hand, if the source-drain leakage current can be suppressed, leak current is dominated by the leakage current between the gate and drain. In this report, the source-drain leakage current and the gate-drain leakage current are calculated when drain voltage is until 50 V. When the sufficiently small access resistance is assumed, change of Al composition of barrier has almost no effect in DC characteristics, while the gate-drain leakage is suppressed when Al composition is lower due to lower polarization charge at heterojunction. To use high Schottky barrier height of the gate of AlGaN layer with high Al composition effectively, reduction of the density of polarization charge by using semi-polar-face is proposed.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.142 No.3 （2022） 特集Ⅰ：スマートシステムと計測・制御技術 －Withコロナ社会に向けて－　 特集Ⅱ：高機能化合物半導体エレクトロニクス技術と将来システムへの応用　特集Ⅲ：国際会議ICESS 2020

本誌掲載ページ: 348-353 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/142/3/142_348/_article/-char/ja/