窒化物半導体を用いたテラヘルツ帯二重誘電体構造パッチアンテナの解析

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2022/12/01

タイトル(英語): Analysis of Terahertz Double Dielectric Structure Patch Antenna Using Nitride Semiconductors

著者名: 三浦　進（愛知工業大学），椋橋　健太（愛知工業大学），五島　敬史郎（愛知工業大学），永瀬　成範（産業技術総合研究所）

著者名(英語): Shin Miura (Aichi Institute of Technology), Kenta Kurahashi (Aichi Institute of Technology), Keishiro Goshima (Aichi Institute of Technology), Masanori Nagase (National Institute of Advanced Industrial Science and Technology)

キーワード: テラヘルツ，パッチアンテナ，窒化ガリウム，FDTD法_x000D_　　terahertz，patch antenna，gallium nitride，FDTD method

要約(英語): Recently, gallium arsenide (GaAs)-based resonant tunneling diode (RTD) oscillators and indium phosphorus (InP)-based Schottky barrier diode (SBD) receivers have been studied in the terahertz (THz) band. The THz devices for practical use should operate at room temperature, be small in size, and have high output power. Therefore, this study was focused on gallium nitride (GaN), which possesses excellent material properties, such as wide bandgap characteristics and heteroepitaxy on Si substrates. The GaN-based oscillators and receivers are expected to be compact, operate at room-temperature, and act as a high-power device for the THz-band devices. However, GaN has crystal defects, which can cause instability in device operations. A double dielectric structure patch antenna composed of Silicon Nitride (SiN) and Benzo Cyclo Butene (BCB) with different dielectric constants was proposed to realize a GaN-based THz transmitter and receiver. The antenna characteristics were investigated using the Finite Difference Time Domain (FDTD) method. The results showed that the SiN has little effect on the radiation, whereas the BCB is strongly responsible for the radiation. Comparing the absolute gain between the double dielectric structure and the conventional structure using the SiN, it was confirmed that the double dielectric structure can improve the absolute gain.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.142 No.12 （2022） 特集：電気・電子・情報関係学会東海支部連合大会

本誌掲載ページ: 1245-1252 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/142/12/142_1245/_article/-char/ja/