ナノシート構造MOSFETに対応した有限量子井戸における電子染み出しの解析

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2024/11/01

タイトル(英語): Analysis of Electron Penetration into the Insulator in Finite Quantum Wells for Nanosheet MOSFETs

著者名: 平井　駿三朗（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Shunzaburo Hirai (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: 電子染み出し，ナノシート構造MOSFET，シュレディンガーポアソンモデル，有限量子井戸　　electron penetration into the insulator，nanosheet MOSFETs，Schrodinger Poisson model，finite quantum well

要約(英語): In this paper, we analyze and quantitatively compare the electron density distribution along the sheet thickness of quantum wells formed in the finite and infinite potential barrier cases, assuming a nanosheet structure consisting of a 5 nm thick Si sheet and HfO2 insulator. The maximum electron density in the finite well case is about 33% larger than in the infinite well case, and the electronic areal density is about 52% larger than in the infinite well case. The electron penetration distance into the insulator is 0.160 nm, which correspond to effectively increasing the sheet thickness by 6% for a sheet thickness of 5 nm. Additionally, for a device with EOT of 0.5 nm, the penetration is accounted for about 5.7% of the insulator thickness. The penetration distance is 0.036 nm larger than that of the previous work of Barker et al. Also, the electronic areal density in insulator range is 1.4 times larger than that of the previous work. It is found that the previous method is underestimated the electron penetration into the insulator.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.144 No.11 （2024） 特集Ⅰ：電気関係学会関西連合大会　特集Ⅱ：電子材料関連技術の最近の進展

本誌掲載ページ: 1026-1031 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/144/11/144_1026/_article/-char/ja/