Nanosheet構造MOSFETの電子密度ピーク位置の解析モデル

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2024/11/01

タイトル(英語): Analytical Model of the Electron Density Peak Position of Nanosheet MOSFETs

著者名: 伊東　龍平（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Ryuhei Ito (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: Nanosheet構造MOSFET，量子閉じ込め効果，デバイスシミュレーション，量子ドリフト拡散モデル，電子密度分布　　nanosheet MOSFETs，quantum confinement effect，device simulation，quantum drift diffusion model，electron density

要約(英語): In this work, we propose an analytical model for predicting the peak position of electron density in Nanosheet MOSFETs. Quantum drift diffusion model is used to examine the distribution of electron density. Specifically, we investigate the gate voltage dependence of the electron density peak position for varying sheet film thicknesses, considering the analytical model for each thickness. Our investigation focuses on sheet film thicknesses of 10nm and 4nm. The results indicate that for the film thickness of 10nm, two electron density peaks are integrated at the center when the gate voltage is 0.4 V, whereas for the film thickness of 4nm, two peaks are integrated at the center with a gate voltage of 0.7 V. Utilizing the simulation results of electron density distribution, we estimate the parameters of the analytical model equation for both film thicknesses. Subsequently, we evaluate the estimated results by comparing them with the simulation results. The analytical model shows an accuracy with only 5.53% discrepancy from the simulation results for the film thickness of 10nm and only 4.01% discrepancy for the film thickness of 4nm.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.144 No.11 （2024） 特集Ⅰ：電気関係学会関西連合大会　特集Ⅱ：電子材料関連技術の最近の進展

本誌掲載ページ: 1038-1043 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/144/11/144_1038/_article/-char/ja/