Ar/N2混合雰囲気中RFマグネトロンスパッタリング法で作製したアモルファスSnO2:N薄膜の特性評価

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2024/11/01

タイトル(英語): Characterization of Amorphous SnO2:N Thin-films Prepared by RF Magnetron Sputtering in Ar/N2 Mixed Gas Atmosphere

著者名: 川口　拓真（工学院大学），大石　竜嗣（埼玉大学），清水　麻希（埼玉大学），土方　泰斗（埼玉大学），相川　慎也（工学院大学）

著者名(英語): Takuma Kawaguchi (Kogakuin University), Ryuji Oishi (Saitama University), Maki Shimizu (Saitama University), Yasuto Hijikata (Saitama University), Shinya Aikawa (Kogakuin University)

キーワード: アモルファス酸化物半導体，SnO2，薄膜，窒素ドーピング，p型変換　　amorphous oxide semiconductors，SnO2，thin films，nitrogen doping，p-type conversion

要約(英語): Nitrogen (N) has attracted attention as a hole dopant for SnOx semiconductors. We have previously reported p-type conversion of n-type SnO2 thin films by N doping by thermal annealing in N2 atmosphere. Since the diffusion length of N is several 10 nm order, uniform N doping in the film is limited in terms of practical applications. In this study, we investigated N doping into the bulk using RF magnetron sputtering in Ar/N2 mixed gas atmosphere. N-doped SnO2 (SnO2:N) thin film was fabricated by the sputtering at a substrate temperature of 300℃ and a N2 concentration varied between 25 and 80%. The fabricated thin films were amorphous under all deposition conditions. As the N2 concentration increased, the absorption edge shifted to the longer wavelength and optical bandgap became narrower. XPS and PL analyses showed that as oxygen vacancy decreased, Sn-N bonding and N3- component, which acts as an acceptor, increased. Hall-effect measurement showed the SnO2:N deposited at 80% N2 concentration has p-type conduction. We believe that this is because increase in density of states of N 2p orbital. However, the mobility was 0.12 cm2/Vs, suggesting limitation in improvement of electrical properties even in N doping into the bulk.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.144 No.11 （2024） 特集Ⅰ：電気関係学会関西連合大会　特集Ⅱ：電子材料関連技術の最近の進展

本誌掲載ページ: 1093-1099 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/144/11/144_1093/_article/-char/ja/