横型SOI高速ダイオードの逆回復動作におけるダイナミックアバランシェ現象の解析と，その抑制構造の開発

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2012/01/01

タイトル(英語): Analysis of Dynamic Avalanche Phenomenon in SOI Lateral High-speed Diode during Reverse Recovery and Development of a Novel Device Structure for Suppressing Dynamic Avalanche

著者名: 戸倉　規仁（（株）デンソー，幸田製作所，半導体プロセス開発部），山本　貴生（（株）デンソー，幸田製作所，半導体プロセス開発部），加藤　久登（（株）デンソー，幸田製作所，半導体プロセス開発部），中川　明夫（合同会社 中川コンサルティング事務所）

著者名(英語): Norihito Tokura (Semiconductor Process R&D Dept., Kota Plant, DENSO CORP.), Takao Yamamoto (Semiconductor Process R&D Dept., Kota Plant, DENSO CORP.), Hisato Kato (Semiconductor Process R&D Dept., Kota Plant, DENSO CORP.), Akio Nakagawa (Nakagawa Consulting Office)

キーワード: マイクロインバータ，SOI，横型ダイオード，逆回復，ダイナミックアバランシェ，デバイスシミュレーション　　microinverter，SOI，lateral diode，reverse recovery，dynamic avalanche，device simulation

要約(英語): We have studied the dynamic avalanche phenomenon in an SOI lateral diode during reverse recovery by using a mixed-mode device simulation. In the study, it has been found that local impact ionization occurs near an anode-side field oxide edge, where a high-density hole current flows and a high electric field appears simultaneously. We propose that a p-type anode extension region (AER) along a trench side wall effectively sweeps out stored carriers beneath an anode p-diffusion layer during reverse recovery, resulting in reduction of the electric field and remarkable suppression of the dynamic avalanche. The AER reduces the total recovery charge and does not cause any increase in the total stored charge under a forward bias operation. This effect is verified experimentally by the fabricated device with AER. Thus, the developed SOI lateral diode is promising as a high-speed and highly rugged free-wheeling diode, which can be integrated into next-generation SOI microinverters.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.132 No.1 （2012） 特集：半導体電力変換研究会

本誌掲載ページ: 17-26 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/132/1/132_1_17/_article/-char/ja/