サブミクロン狭ギャップをもつシャント型MEMSスイッチの開発

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2011/11/01

タイトル(英語): Integrated Shunt-type MEMS Switch with a Submicron Narrow Gap

著者名: 山本 翔司（立命館大学　理工学部），前江田 和也（立命館大学　理工学部），鈴木 健一郎（立命館大学　理工学部）

著者名(英語): Shoji Yamamoto (College of Science and Engineering, Ritsumeikan University), Kazuya Maeda (College of Science and Engineering, Ritsumeikan University), Kenichiro Suzuki (College of Science and Engineering, Ritsumeikan University)

キーワード: RF-MEMS，静電駆動スイッチ，駆動電圧，周波数特性，集積化　　RF-MEMS，Electrostatically-driven switch，Driving voltage，Frequency characteristics，Integration

要約(英語): Shunt-type MEMS resistive switches perform low loss and high isolation in a wide frequency band. However, they suffer from a high driving voltage similar to other MEMS electrostatically-driven switches. The decrease of the gap between the driving electrodes causes stronger electrostatic force, leading to the driving voltage decrease. On the other hand, the reduction of the gap causes another problem, e.g. decreasing the isolation. In this paper, in order to investigate the influence of the gap reduction on the performance of the MEMS switches, we fabricated a switch with the gap of 0.9 μm and compared it with one having the gap of 2 μm. The measured results have showed that the fabricated narrow gap switches have as good RF frequency characteristics as the 2 μm gap ones, owing to forming a slit in the moving electrode over the transmission line.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.131 No.11 （2011）

本誌掲載ページ: 394-401 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/131/11/131_11_394/_article/-char/ja/