MEMSのための両面SiC PECVD装置の開発

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2012/05/01

タイトル(英語): Development of Double-side SiC PECVD System for MEMS

著者名: 鈴木　康久（東北大学　大学院工学研究科　ナノメカニクス専攻），田中　秀治（東北大学　大学院工学研究科　ナノメカニクス専攻），畠山　庸平（東北大学　大学院工学研究科　ナノメカニクス専攻），江刺　正喜（東北大学　大学院工学研究科　ナノメカニクス専攻）

著者名(英語): Yasuhisa Suzuki (Department of Nanomechanics, Tohoku University), Shuji Tanaka (Department of Nanomechanics, Tohoku University), Yohei Hatakeyama (Department of Nanomechanics, Tohoku University), Masayoshi Esashi (Department of Nanomechanics, Tohoku University)

キーワード: 炭素珪素，プラズマ支援CVD，両面成膜，基板反り，膜応力，MEMS　　Silicon carbide，PECVD，Double-side deposition，Wafer bending，Film stress，MEMS

要約(英語): This paper reports the development of a new double-side plasma-enhanced plasma chemical vapor deposition (PECVD) system for amorphous SiC. The PECVD system has cathode-coupling and hot wall type configuration. A wafer, which works as a cathode, is supported at the center of a quartz tube, and carbon anodes are placed at both sides of the wafer. Using tetramethylsilane (Si(CH3)4) mixed with H2 and Ar, amorphous SiC was deposited on both sides of the wafer simultaneously, and little wafer bending was observed even if the film has a compressive stress of several hundred MPa. Thus, the developed double-side PECVD system is useful to minimize wafer bending, which is often a problem for devices and fabrication processes. The fundamental properties (e.g. stress and Si/C ratio) of deposited films were investigated under different deposition conditions (e.g. gas flow rates and self-bias voltage).

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.132 No.5 （2012）

本誌掲載ページ: 114-118 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/132/5/132_5_114/_article/-char/ja/