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High-efficient Chip to Wafer Self-alignment and Bonding for Flexible and Size-free MEMS-IC Integration

High-efficient Chip to Wafer Self-alignment and Bonding for Flexible and Size-free MEMS-IC Integration

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カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2012/08/01

タイトル(英語): High-efficient Chip to Wafer Self-alignment and Bonding for Flexible and Size-free MEMS-IC Integration

著者名: Jian Lu (Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST)), Hideki Takagi (Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute

著者名(英語): Jian Lu (Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST)), Hideki Takagi (Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST)), Yuta Nakano (Tokyo University of Science), Ryutaro Maeda (Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST))

キーワード: size-free integration,self-alignment,SAM,lift-off,plasma activated bonding,MEMS

要約(英語): The large-scale and low-cost integration of various MEMS devices with ICs is significantly important for MEMS ubiquitous applications and commercialization. This paper presents our flexible and size-free MEMS-IC integration approach by a two-step process: MEMS and IC known-good-dies (KGD) are temporarily bonded onto carrier wafer first, and then those KGDs were transferred from carrier wafer to target IC wafer or interposer wafer by permanent bonding. In this work, surface self-assembled monolayer (SAM) fine pattern was introduced by a simple and low-cost lift-off process to define the binding-sites, which was demonstrated effective for rapid (in milliseconds) and high-accurate (<1μm) self-alignment of KGDs onto carrier wafer for temporary bonding. Plasma activated Au-Au bumpless bonding was applied for low-temperature permanent bonding (?200℃) of KGDs onto target wafer with less damage to MEMS and IC devices.

本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.132 No.8 (2012) 特集:MEMS パッケージングと微細加工技術

本誌掲載ページ: 230-234 p

原稿種別: 論文/英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/132/8/132_230/_article/-char/ja/

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