パルス電流印加ゲート構成によるFET水素センサの応答特性の高速化
パルス電流印加ゲート構成によるFET水素センサの応答特性の高速化
カテゴリ: 論文誌(論文単位)
グループ名: 【E】センサ・マイクロマシン部門
発行日: 2014/08/01
タイトル(英語): FET Hydrogen Sensor by Direct Heating of Platinum Metal Gate for Fast Response Time
著者名: 奥井 貴博(岡山大学大学院 自然科学研究科),牛田 祐貴(岡山大学大学院 自然科学研究科),武市 修蔵(岡山大学大学院 自然科学研究科),堺 健司(岡山大学大学院 自然科学研究科),紀和 利彦(岡山大学大学院 自然科学研究科),塚田 啓二(岡山大学大学院 自然科学研究科)
著者名(英語): Takahiro Okui (Graduate School of Natural Science and Technology, Okayama University), Yuki Usita (Graduate School of Natural Science and Technology, Okayama University), Shuzo Takeichi (Graduate School of Natural Science and Technology, Okayama University), Kenji Sakai (Graduate School of Natural Science and Technology, Okayama University), Toshihiko Kiwa (Graduate School of Natural Science and Technology, Okayama University), Keiji Tsukada (Graduate School of Natural Science and Technology, Okayama University)
キーワード: 水素センサ,電界効果トランジスタ,白金,応答時間,ゲート金属 Hydrogen sensor,Field effect transistor (FET),platinum,response time,metal gate
要約(英語): Improvement of the response time by direct heating of the gate catalytic metal of an FET sensor was investigated. The FET hydrogen sensor that has an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. In a previous study, there was a problem in the reproducibility as some of the FET sensors displayed long recovery characteristics caused by hydrogen atoms diffused into the Pt thin film. To improve the response characteristics, two electrodes were connected to the gate metal, then, a pulse current was applied to the gate metal, having a resistance element. When applying the pulse current to the gate portion, desorption of the hydrogen remaining in the platinum thin film was accelerated because the platinum was instantaneously heated. Consequently, the hysteresis of the hydrogen was improved. Furthermore, reproducible response, fast response time and recovery time were achieved.
本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.134 No.8 (2014)
本誌掲載ページ: 264-269 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/134/8/134_264/_article/-char/ja/
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