3C-SiCナノシートにおける量子閉じ込め効果とピエゾ抵抗特性シミュレーション

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2016/11/01

タイトル(英語): Quantum Confinement and Piezoresistivity Simulation in 3C-SiC Nanosheet

著者名: 中村　康一（京都大学 学際融合教育研究推進センター／エジプト日本科学技術大学 材料工学専攻）

著者名(英語): Koichi Nakamura (Center for the Promotion of Interdisciplinary Education and Research (C-PiER), Kyoto University/Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology (E-JUST))

キーワード: 3C-SiC，ナノシート，ピエゾ抵抗，第一原理シミュレーション，量子閉じ込め　　3C-SiC，Nanosheet，Piezoresistivity，First-principles simulation，Quantum confinement

要約(英語): The piezoresistivity in beta silicon carbide (3C-SiC) ultra-thin nanosheet with (001) surface orientation has been simulated on the basis of first-principles calculations of model structures. Electronic structure of the 3C-SiC nanosheet model with about 4 nm thickness has been completely verified in terms of the quantum confinement by the projection of the 3-dimensional multi-valley conduction band for bulk 3C-SiC onto the 2-dimensional reciprocal-lattice plane. For the ultra-thin 3C-SiC nanosheet models of less than 2 nm thickness, original features of themselves in electronic state can be observed beyond the quantum confinement concept. The strain response to carrier conductivity of n- or p-doped nanosheet models were calculated using band densities and their effective mass tensors with respect to carrier concentration and temperature. In the p-doped state, much larger longitudinal and transverse gauge factors for [110] direction were evaluated with the same qualitative character as p-type bulk 3C-SiC, on the condition that thickness is more than 2 nm under the quantum confinement effect.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.136 No.11 （2016） 特集：マイクロマシン・MEMSを支えるナノテク技術

本誌掲載ページ: 465-472 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/136/11/136_465/_article/-char/ja/