導電性酸化膜と金属膜を下部電極に併用したPZT薄膜の結晶成長

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2018/11/01

タイトル(英語): Crystal Growth of PZT Thin Film on Combination with Metal Electrode and Conductive Oxide Layer

著者名: 水嵜　英明（長野県工業技術総合センター），佐藤　敏郎（信州大学学術研究院工学系），曽根原　誠（信州大学学術研究院工学系）

著者名(英語): Hideaki Mizusaki (Nagano Prefecture General Industrial Technology Center), Toshiro Sato (Faculty of Engineering, Shinshu University), Makoto Sonehara (Faculty of Engineering, Shinshu University)

キーワード: PZT，導電性酸化膜，ルテニウム酸ストロンチウム，拡散，エッチストップ　　PZT，conductive oxide，strontium luthenium oxide，diffusion，etching stop

要約(英語): A pyroelectric infrared sensor detects a pyroelectric current caused by the temperature rise of a Pb(Zr_x, Ti_1-x)O₃ (PZT) film due to irradiation of infrared rays. However, the temperature rise of PZT is suppressed when heat is transferred from an electrode of the sensor, and the sensitivity is lowered. For reducing the thermal conductivity of electrodes, a SrRuO₃ (SRO) film was used as the electrode of the PZT film. Pt/Ti multilayer films were formed on the SRO film to prevent the PZT film from being dissolved by wet etching. The film thickness of Pt was 10 and 50 nm, and the film thickness of Ti was 0, 2, and 30 nm. In the case that the PZT film was formed on the 10 nm Pt/SRO film, the average grain diameter of this PZT film was 1 μm, and the crystal orientation was random. Also, the residual polarization (2P_r) was approximately 37 μC/cm², and the pyroelectric coefficient was approximately 400 μCK^-1m^-2.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.138 No.11 （2018）

本誌掲載ページ: 495-502 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/138/11/138_495/_article/-char/ja/