Area-selective Cu Film Growth on TiN and SiO2 by Supercritical Fluid Deposition

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2020/01/01

タイトル(英語): Area-selective Cu Film Growth on TiN and SiO2 by Supercritical Fluid Deposition

著者名: Naoto Usami (Department of Electrical Engineering and Information Systems (EEIS), The University of Tokyo), Etsuko Ota (VLSI Design and Education Center (VDEC), The University of Tokyo), Akio Higo (VLSI Design and Education Center (VDEC), The University o

著者名(英語): Naoto Usami (Department of Electrical Engineering and Information Systems (EEIS), The University of Tokyo), Etsuko Ota (VLSI Design and Education Center (VDEC), The University of Tokyo), Akio Higo (VLSI Design and Education Center (VDEC), The University of Tokyo), Takeshi Momose (Department of Materials Engineering, The University of Tokyo), Yoshio Mita (Department of Electrical Engineering and Information Systems (EEIS), The University of Tokyo)

キーワード: Supercritical fluid deposition，Area-selective deposition，Copper，Proximity effect

要約(英語): This paper reports an area-selective supercritical fluid deposition (SCFD) of Cu with supercritical CO2 and H2 reductant. We demonstrated an area-selective Cu SCFD on TiN pre-patterned over a SiO2 underlayer on Si substrate. Atomic force microscopy and Auger electron spectroscopy were employed to characterize the fabricated samples. Several SCFD experiments revealed deposition dependence on the surface material as well as the proximity effect, which made the selective SCFD possible on pre-patterned metal surfaces over insulating underlayers.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.140 No.1 （2020） 特集：センサ・マイクロマシン英文特集号

本誌掲載ページ: 31-36 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/140/1/140_31/_article/-char/ja/