ハーフインチ水晶ウエハ上へ成膜したAlN薄膜上への弾性表面波デバイスアレイの作製

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2022/09/01

タイトル(英語): Microfabrication of Surface Acoustic Wave Devices with AlN Thin Film Deposited on Half-inch Quartz Wafer

著者名: 永野　朝日（九州工業大学 大学院情報工学研究院），北村　奏人（九州工業大学 大学院情報工学研究院），野田　周一（産業技術総合研究所 デバイス技術研究部門），村上　直（九州工業大学 大学院情報工学研究院），井口　航平（九州工業大学 大学院情報工学研究院），クンプアン　ソマワン（産業技術総合研究所 デバイス技術研究部門），原　史朗（産業技術総合研究所 デバイス技術研究部門）

著者名(英語): Asahi Nagano (Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology (Kyutech)), Kanato Kitamura (Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology (Kyutech)), Shuichi Noda (Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)), Sunao Murakami (Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology (Kyutech)), Kohei Iguchi (Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology (Kyutech)), Sommawan Khumpuang (Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)), Shiro Hara (Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

キーワード: 弾性表面波デバイス，圧電薄膜，窒化アルミニウム，水晶_x000D_　　surface acoustic wave device，piezoelectric thin film，aluminum nitride (AlN)，quartz

要約(英語): In this paper, we have fabricated surface acoustic wave (SAW) devices with six sets of interdigital transducers (IDTs) on half-inch wafers of quartz with deposited thin films of aluminum nitride (AlN). Firstly, AlN thin films have been deposited by reactive sputtering in Ar-N2 gas mixture at 400℃ with the high power impulse magnetron sputtering (HiPIMS) system which was developed for microfabrication process in the localized clean environment with half-inch wafer (Minimal Fab). After that, IDTs of Al thin films have been prepared on the AlN thin films. The X-ray diffraction (XRD) pattern of the AlN thin films shows that the AlN films have c-axis (002) orientation. Furthermore, the frequency responses have been measured with four paired IDTs of the SAW devices, which were selected from six sets of IDTs as an input electrode and an output electrode. These results show device properties responding to the design of the IDTs and also suggest the potential of the fabricated SAW devices as the 4-paralleled frequency filter and/or sensing system.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.142 No.9 （2022） 特集：次世代社会基盤を支えるIoT，センシングシステムのための要素技術

本誌掲載ページ: 248-253 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/142/9/142_248/_article/-char/ja/